dated : 17/09/2016 rev:02 ? semtech electronics ltd. 13005 npn silicon power transistors for high-voltage, high-speed power switching applications. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 700 v collector emitter voltage v ceo 400 v emitter base voltage v ebo 9 v collector current i c 4 a power dissipation (t a = 25 o c) p tot 2 w power dissipation (t c = 25 o c) p tot 75 w junction temperature t j 150 o c storage temperature range t stg - 55 to + 150 o c characteristics at t a = 25 o c parameter symbol min. typ. max. unit dc current gain at v ce = 5 v, i c = 1 a at v ce = 5 v, i c = 2 a h fe h fe 10 8 - - 60 40 - - collector base cutoff current at v cb = 700 v i cbo - - 1 ma emitter base cutoff current at v eb = 9 v i ebo - - 1 ma collector emitter breakdown voltage at i c = 10 ma v (br)ceo 400 - - v collector emitter saturation voltage at i c = 1 a, i b = 0.2 a at i c = 2 a, i b = 0.5 a at i c = 4 a, i b = 1 a v ce(sat) v ce(sat) v ce(sat) - - - - - - 0.5 0.6 1 v v v base emitter saturation voltage at i c = 1 a, i b = 0.2 a at i c = 2 a, i b = 0.5 a v be(sat) v be(sat) - - - - 1.2 1.6 v v gain bandwidth product at v ce = 10 v, i c = 500 ma, f = 1 mhz f t 4 - - mhz collector base capacitance at v cb = 10 v, f = 0.1 mhz c ob - 65 - pf to-220 plastic package
dated : 17/09/2016 rev:02 ? semtech electronics ltd. 13005
dated : 17/09/2016 rev:02 ? semtech electronics ltd. 13005 to-220 package outline
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